- 专利标题: Two step metallization formation
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申请号: US14523256申请日: 2014-10-24
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公开(公告)号: US09659856B2公开(公告)日: 2017-05-23
- 发明人: Ya-Lien Lee , Chun-Chieh Lin
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L21/768 ; H01L23/532 ; H01L23/48 ; H01L21/4763
摘要:
An integrated circuit structure includes a first conductive line, a dielectric layer over the first conductive line, a diffusion barrier layer in the dielectric layer, and a second conductive line in the dielectric layer. The second conductive line includes a first portion of the diffusion barrier layer. A via is underlying the second conductive line and electrically couples the second conductive line to the first conductive line. The via includes a second portion of the diffusion barrier layer, with the second portion of the diffusion barrier layer having a bottom end higher than a bottom surface of the via.
公开/授权文献
- US20160118335A1 TWO STEP METALLIZATION FORMATION 公开/授权日:2016-04-28
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