Invention Grant
- Patent Title: Standard cell having cell height being non-integral multiple of nominal minimum pitch
-
Application No.: US14253205Application Date: 2014-04-15
-
Publication No.: US09659129B2Publication Date: 2017-05-23
- Inventor: Shang-Chih Hsieh , Hui-Zhong Zhuang , Ting-Wei Chiang , Chun-Fu Chen , Hsiang-Jen Tseng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/50
- IPC: H01L23/50 ; G06F17/50 ; H01L21/768 ; H01L27/118 ; H01L27/02

Abstract:
An integrated circuit, manufactured by a process having a nominal minimum pitch of metal lines, includes a plurality of metal lines and a plurality of standard cells under the plurality of metal lines. The plurality of metal lines extends along a first direction, and the plurality of metal lines are separated, in a second direction perpendicular to the first direction, by integral multiples of the nominal minimum pitch. At least one of the plurality of standard cells has a cell height along the second direction, and the cell height is a non-integral multiple of the nominal minimum pitch.
Public/Granted literature
- US20140327050A1 STANDARD CELL HAVING CELL HEIGHT BEING NON-INTEGRAL MULTIPLE OF NOMINAL MINIMUM PITCH Public/Granted day:2014-11-06
Information query
IPC分类: