Co-deposition of conductive material at the diffusion media/plate interface
Abstract:
A method of depositing a conductive material is described. The method includes: providing a plate selected from anode plates, cathode plates, bipolar plates, or combinations thereof, wherein the plate includes gas flow channels; providing a diffusion media in contact with the gas flow channel side of the plate to form an assembly; introducing a gaseous precursor of the conductive material into the assembly using a chemical vapor infiltration process; infiltrating the gaseous precursor into the diffusion media and gas flow channels of the plates; and depositing a coating of the conductive material on the diffusion media, the gas flow channels of the plate, or both. An assembly having a CVI conductive coating and a fuel cell incorporating the diffusion media having the CVI conductive coating are also described.
Information query
Patent Agency Ranking
0/0