Invention Grant
- Patent Title: Semiconductor light emitting device and semiconductor light emitting apparatus including the same
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Application No.: US14454742Application Date: 2014-08-08
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Publication No.: US09653515B2Publication Date: 2017-05-16
- Inventor: Ju Heon Yoon , Myeong Ha Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0151269 20131206
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/32 ; H01L33/38 ; H01L33/62

Abstract:
A semiconductor light emitting device includes a substrate; a light emitting structure and a Zener diode structure disposed to be spaced apart from each other on the substrate, and including a first semiconductor layer and a second semiconductor layer, respectively; and a common, integrally formed, electrode electrically connected to the first semiconductor layer of the light emitting structure and the second semiconductor layer of the Zener diode structure. At least a portion of the Zener diode formed by the Zener diode structure is disposed below the common electrode.
Public/Granted literature
- US20150162376A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS INCLUDING THE SAME Public/Granted day:2015-06-11
Information query
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