发明授权
- 专利标题： Electronic device, manufacturing method of electronic device, and sputtering target
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申请号： US14524224申请日： 2014-10-27
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公开(公告)号： US09640668B2公开(公告)日： 2017-05-02
- 发明人: Shunpei Yamazaki
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2010-187873 20100825
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L29/786 ; C23C14/08 ; C23C14/34 ; H01L21/02 ; H01L29/49 ; H01L29/66 ; H01L29/04 ; H01L29/24
摘要：
A film formation is performed using a target in which a material which is volatilized more easily than gallium when heated at 400° C. to 700° C., such as zinc, is added to gallium oxide by a sputtering method with high mass-productivity which can be applied to a large-area substrate, such as a DC sputtering method or a pulsed DC sputtering method. This film is heated at 400° C. to 700° C., whereby the added material is segregated in the vicinity of a surface of the film. Another portion of the film has a decreased concentration of the added material and a sufficiently high insulating property; therefore, it can be used for a gate insulator of a semiconductor device, or the like.
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