- 专利标题： Semiconductor device, a power semiconductor device, and a method for processing a semiconductor device
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申请号： US14555736申请日： 2014-11-28
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公开(公告)号： US09633957B2公开(公告)日： 2017-04-25
- 发明人: Jochen Hilsenbeck , Jens Peter Konrath , Thomas Frank , Roland Rupp
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Viering, Jentschura & Partner mbB
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L23/00 ; H01L23/31 ; H01L23/58 ; H01L29/43
摘要：
According to various embodiments, a semiconductor device may include: a layer stack formed at a surface of the semiconductor device, the layer stack including: a metallization layer including a first metal or metal alloy; a protection layer covering the metallization layer, the protection layer including a second metal or metal alloy, wherein the second metal or metal alloy is less noble than the first metal or metal alloy.
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