- 专利标题: Semiconductor device and electric power control apparatus
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申请号: US15157040申请日: 2016-05-17
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公开(公告)号: US09621151B2公开(公告)日: 2017-04-11
- 发明人: Ryo Kanda , Koichi Yamazaki , Hiroshi Kuroiwa , Masatoshi Maeda , Tetsu Toda
- 申请人: RENESAS ELECTRONICS CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2015-141219 20150715
- 主分类号: H03K3/00
- IPC分类号: H03K3/00 ; H03K17/082 ; H03K3/356 ; H03K5/01 ; H03K5/24 ; H03K17/567 ; H01L23/528 ; H01L23/00
摘要:
A driver IC includes a ring-shaped termination area, and a first area and a second area that are respectively arranged outside and inside the termination area on a layout. A sense MOS that is arranged between floating terminal and a first sense node and is driven at a power supply voltage is formed in the termination area. A fault detection circuit that detects presence of a fault when a voltage of the first sense node is higher than a decision voltage that has been deteLutined in advance in a period of time that a low side driver is driving a low side transistor into an ON state is formed in the first area.
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