发明授权
US09589095B2 Method of converting between non-volatile memory technologies and system for implementing the method 有权
在非易失性存储器技术之间转换的方法和用于实现该方法的系统

Method of converting between non-volatile memory technologies and system for implementing the method
摘要:
A method of designing a charge trapping memory array includes designing a memory array layout. The memory array layout includes a first type of transistors; electrical connections between memory cells of the memory array layout; a first input/output (I/O) interface; and a charge pump. The method further includes modifying the memory array layout, using a processor, to replace the first type of transistors with a second type of transistors different than the first type of transistors. The method further includes modifying the memory array layout, using the processor, to modify the charge pump based on an operating voltage of the second type of transistors.
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