Negative photoresist and methods of preparing and using the same

Invention Grant

US09588426B2 Negative photoresist and methods of preparing and using the same 有权

Title translation: 负光致抗蚀剂及其制备方法和使用方法

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Patent Title: Negative photoresist and methods of preparing and using the same
Patent Title (中): 负光致抗蚀剂及其制备方法和使用方法
Application No.: US14428143

Application Date: 2014-08-15
Publication No.: US09588426B2

Publication Date: 2017-03-07
Inventor: Jianguo Wang , Hehe Hu
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Applicant Address: CN Beijing
Assignee: BOE Technology Group Co., Ltd.
Current Assignee: BOE Technology Group Co., Ltd.
Current Assignee Address: CN Beijing
Agency: Collard & Roe, P.C.
Priority: CN201410037970 20140126
International Application: PCT/CN2014/084519 WO 20140815
International Announcement: WO2015/109827 WO 20150730
Main IPC: G03F7/075
IPC: G03F7/075 ; G03F7/004 ; G03F7/16 ; G03F7/20 ; G03F7/32 ; G03F7/038

Negative photoresist and methods of preparing and using the same

Abstract:

Disclosed is a negative photoresist comprising 1 to 90 parts of hydroxyl-containing or carboxyl-containing film-forming resin, 1 to 99 parts of silicon-containing vinyl ether monomer, 0.1 to 15 parts by weigh of a crosslinking agent, and an organic solvent capable of dissolving the aforesaid substances. Disclosed is also methods of preparing and using the negative photoresist.

Abstract(Chinese):

公开了含有1〜90份含羟基或含羧基的成膜树脂，1〜99份含硅乙烯基醚单体，0.1〜15重量份交联剂和有机溶剂的负性光致抗蚀剂能够溶解上述物质。还公开了制备和使用负性光致抗蚀剂的方法。

Public/Granted literature

US20150370168A1 NEGATIVE PHOTORESIST AND METHODS OF PREPARING AND USING THE SAME Public/Granted day:2015-12-24

Information query

Espacenet

IPC分类:

G	物理
G03	摄影术；电影术；利用了光波以外其他波的类似技术；电记录术；全息摄影术
G03F	图纹面的照相制版工艺，例如，印刷工艺、半导体器件的加工工艺；其所用材料；其所用原版；其所用专用设备（照相排版装置入B41B；为摄影用的感光材料或处理入G03C；电记录、感光层或处理入G03G）
G03F7/00	图纹面，例如，印刷表面的照相制版如光刻工艺；图纹面照相制版用的材料，如：含光致抗蚀剂的材料；图纹面照相制版的专用设备（用于特殊工艺的光致抗蚀剂结构见相关的位置，例如，B44C，H01L，例如，H01L21/00，H05K）
G03F7/004	.感光材料（G03F7/12，G03F7/14优先）
G03F7/075	..含硅的化合物