Invention Grant
- Patent Title: Semipolar nitride semiconductor structure and method of manufacturing the same
- Patent Title (中): 半极性氮化物半导体结构及其制造方法
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Application No.: US14532921Application Date: 2014-11-04
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Publication No.: US09583340B2Publication Date: 2017-02-28
- Inventor: Jun-Youn Kim , Jae-Kyun Kim , Joo-Sung Kim , Young-Soo Park , Young-Jo Tak
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0133820 20131105
- Main IPC: C30B29/40
- IPC: C30B29/40 ; H01L21/02 ; C30B25/18 ; H01L33/12 ; H01L33/00
Abstract:
Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7≦k≦13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.
Public/Granted literature
- US20150123140A1 SEMIPOLAR NITRIDE SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-05-07
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