A manufacturing method of a pattern transfer mask includes the following steps. A basic mask is provided. The basic mask includes a plurality of patterns formed by a patterned absorber layer on a substrate according to a first writing layout. A photolithographic process is then performed by the basic mask to obtain individual depth of focus (iDoF) ranges of each of the patterns and a usable depth of focus (UDoF) range of the patterns. At least one constrain pattern dominating the UDoF range is selected from the patterns in the basic mask. The rest of the patterns except the constrain pattern are non-dominating patterns. A second writing layout is then generated for reducing a thickness of the patterned absorber layer in the constrain pattern or in the non-dominating patterns.