Reference circuits for biasing radio frequency electronics are provided herein. In certain implementations, a gallium arsenide die includes a power amplifier configured to provide amplification to a signal, a reference voltage circuit including an output terminal that provides a reference voltage, and a mirror circuit configured to bias the power amplifier based on the reference voltage. The reference voltage circuit includes a bipolar transistor, a field effect transistor, and a circuit portion that generates a voltage that is proportional to absolute temperature. The reference voltage circuit generates the reference voltage based on a sum of a base-to-emitter voltage of the bipolar transistor, a turn-on voltage of the field effect transistor, and the voltage that is proportional to absolute temperature.