发明授权
US09556020B2 Method of wafer-level hermetic packaging with vertical feedthroughs
有权
具有垂直馈通的晶片级密封封装方法
- 专利标题: Method of wafer-level hermetic packaging with vertical feedthroughs
- 专利标题(中): 具有垂直馈通的晶片级密封封装方法
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申请号: US14915633申请日: 2013-09-11
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公开(公告)号: US09556020B2公开(公告)日: 2017-01-31
- 发明人: Said Emre Alper , Mustafa Mert Torunbalci , Tayfun Akin
- 申请人: Said Emre Alper , Mustafa Mert Torunbalci , Tayfun Akin
- 申请人地址: TR Ankara
- 专利权人: Said Emre Alper
- 当前专利权人: Said Emre Alper
- 当前专利权人地址: TR Ankara
- 代理商 Gokalp Bayramoglu
- 国际申请: PCT/TR2013/000298 WO 20130911
- 国际公布: WO2015/038078 WO 20150319
- 主分类号: H01L23/10
- IPC分类号: H01L23/10 ; B81C1/00 ; H01L23/04 ; H01L23/02 ; H01L23/06
摘要:
A wafer-level packaging method for MEMS structures that are desired to be encapsulated in a hermetic cavity and that need the transfer of at least a single or multiple electrical leads to the outside of the cavity without destroying the hermeticity of the cavity. Lead transfer is achieved using vertical feedthroughs that are patterned on the capping substrate within the same fabrication step to produce the encapsulating cavity. Furthermore, the structure of the vertical feedthroughs and via openings to reach these feedthroughs are arranged in such a way that conventional wirebonding would be sufficient to connect the vertical feedthroughs to the outer world, without a need for conductor-refill inside the via openings. The method is compatible with low-temperature thermocompression-based bonding/sealing processes using various sealing materials such as thin-film metals and alloys, and also with the silicon-glass anodic or silicon-silicon fusion bonding processes.
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