发明授权
- 专利标题: Method for an efficient modeling of the impact of device-level self-heating on electromigration limited current specifications
- 专利标题(中): 用于对器件级自加热对电迁移限制电流规格的影响的有效建模的方法
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申请号: US14612683申请日: 2015-02-03
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公开(公告)号: US09552455B2公开(公告)日: 2017-01-24
- 发明人: Daniel J. Poindexter , Gregory G. Freeman , Siyuranga O. Koswatta , J. Campbell Scott , Leon J. Sigal , James D. Warnock
- 申请人: GLOBALFOUNDRIES INC.
- 申请人地址: KY Grnd Cayman
- 专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人地址: KY Grnd Cayman
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
An efficient method of calculating maximum current limits for library gates in which a current limit includes the impact of self-heating effects associated with the maximum current. A maximum current solution is obtained in a self-consistent fashion, providing a way of determining the self-consistent solution in a rapid fashion without extensive numerical calculations or simulations. The present method provides a practical approach for characterizing a large library of gates for use in CMOS designs.
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