发明授权
US09552455B2 Method for an efficient modeling of the impact of device-level self-heating on electromigration limited current specifications 有权
用于对器件级自加热对电迁移限制电流规格的影响的有效建模的方法

Method for an efficient modeling of the impact of device-level self-heating on electromigration limited current specifications
摘要:
An efficient method of calculating maximum current limits for library gates in which a current limit includes the impact of self-heating effects associated with the maximum current. A maximum current solution is obtained in a self-consistent fashion, providing a way of determining the self-consistent solution in a rapid fashion without extensive numerical calculations or simulations. The present method provides a practical approach for characterizing a large library of gates for use in CMOS designs.
信息查询
0/0