Invention Grant
US09548189B2 Plasma etching systems and methods using empirical mode decomposition
有权
等离子体蚀刻系统和使用经验模式分解的方法
- Patent Title: Plasma etching systems and methods using empirical mode decomposition
- Patent Title (中): 等离子体蚀刻系统和使用经验模式分解的方法
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Application No.: US14694356Application Date: 2015-04-23
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Publication No.: US09548189B2Publication Date: 2017-01-17
- Inventor: Luc Albarede , Yassine Kabouzi , Jorge Luque , Andrew D. Bailey, III
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: US CA Fremont
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A substrate etching system includes an etching control module, a filtering module, and an endpoint module. The etching control module selectively begins plasma etching of a substrate within an etching chamber. The filtering module, during the plasma etching of the substrate: receives a signal including endpoint information; decomposes the signal using empirical mode decomposition (EMD); and generates a filtered signal based on results of the EMD. The endpoint module indicates when an endpoint of the plasma etching of the substrate has been reached based on the filtered signal. The etching control module ends the plasma etching of the substrate in response to the indication that the endpoint of the plasma etching of the substrate has been reached.
Public/Granted literature
- US20160314943A1 PLASMA ETCHING SYSTEMS AND METHODS USING EMPIRICAL MODE DECOMPOSITION Public/Granted day:2016-10-27
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