发明授权
- 专利标题: Methods of forming diodes
- 专利标题(中): 形成二极管的方法
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申请号: US14959884申请日: 2015-12-04
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公开(公告)号: US09520478B2公开(公告)日: 2016-12-13
- 发明人: Gurtej S. Sandhu , Chandra Mouli
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wells St. John P.S.
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L21/283 ; B82Y10/00 ; H01L29/06 ; H01L29/08 ; H01L29/417 ; H01L29/872 ; H01L45/00 ; H01L21/28 ; H01L49/02
摘要:
Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one layer. The first electrode, at least one layer, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure. Some embodiments include diodes having a first electrode that contains two or more projections extending upwardly from a base, having at least one layer over the first electrode, and having a second electrode over the at least one layer.
公开/授权文献
- US20160087071A1 Methods of Forming Diodes 公开/授权日:2016-03-24
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