发明授权
- 专利标题： Monolithically isled back contact back junction solar cells
- 专利标题（中）： 单片背面接触背面太阳能电池
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申请号： US14179526申请日： 2014-02-12
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公开(公告)号： US09515217B2公开(公告)日： 2016-12-06
- 发明人: Mehrdad M. Moslehi , Pawan Kapur , Karl-Josef Kramer , Michael Wingert
- 申请人： Solexel, Inc.
- 申请人地址： US CA Milpitas
- 专利权人： Solexel, Inc.
- 当前专利权人： Solexel, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理商 John Wood
- 主分类号： H01L31/18
- IPC分类号： H01L31/18 ; H01L31/0224 ; H01L27/142 ; H01L31/05
摘要：
According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.
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