Invention Grant
US09515212B2 Solar cell and method for manufacturing with pre-amorphization implant to form emitter
有权
太阳能电池和用于制造前非晶化植入物以形成发射体的方法
- Patent Title: Solar cell and method for manufacturing with pre-amorphization implant to form emitter
- Patent Title (中): 太阳能电池和用于制造前非晶化植入物以形成发射体的方法
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Application No.: US14605394Application Date: 2015-01-26
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Publication No.: US09515212B2Publication Date: 2016-12-06
- Inventor: Kyoungsoo Lee , Seongeun Lee
- Applicant: LG Electronics Inc.
- Applicant Address: KR Seoul
- Assignee: LG ELECTRONICS INC.
- Current Assignee: LG ELECTRONICS INC.
- Current Assignee Address: KR Seoul
- Agency: LG Electronics Inc.
- Priority: KR10-2011-0129205 20111205
- Main IPC: H01L31/06
- IPC: H01L31/06 ; H01L31/0376 ; H01L31/04 ; H01L27/142 ; H01L31/068 ; H01L31/18 ; H01L25/04 ; H01L31/0224

Abstract:
A method for manufacturing a solar cell includes preparing a semiconductor substrate having a first conductivity type dopant; ion-implanting a pre-amorphization elements into a front surface of the semiconductor substrate to form an amorphous layer; and forming an emitter layer by ion-implanting second conductivity type dopant into the front surface of the semiconductor substrate. The method then further includes heat-treating the layers to activate the second conductivity type dopant. The method further includes forming a back surface field layer at a back surface of the semiconductor substrate by ion-implanting a first conductivity type dopant.
Public/Granted literature
- US20150162467A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-06-11
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