Invention Grant
US09515188B2 Fin field effect transistors having conformal oxide layers and methods of forming same
有权
具有保形氧化物层的鳍式场效应晶体管及其形成方法
- Patent Title: Fin field effect transistors having conformal oxide layers and methods of forming same
- Patent Title (中): 具有保形氧化物层的鳍式场效应晶体管及其形成方法
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Application No.: US14579955Application Date: 2014-12-22
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Publication No.: US09515188B2Publication Date: 2016-12-06
- Inventor: Chia-Cheng Chen , Meng-Shu Lin , Liang-Yin Chen , Xiong-Fei Yu , Hui-Cheng Chang , Syun-Ming Jang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/51 ; H01L29/66 ; H01L21/8234
Abstract:
An embodiment fin field-effect-transistor (finFET) includes a semiconductor fin comprising a channel region and a gate oxide on a sidewall and a top surface of the channel region. The gate oxide includes a thinnest portion having a first thickness and a thickest portion having a second thickness different than the first thickness. A difference between the first thickness and the second thickness is less than a maximum thickness variation, and the maximum thickness variation is in accordance with an operating voltage of the finFET.
Public/Granted literature
- US20160181428A1 Fin Field Effect Transistors Having Conformal Oxide Layers and Methods of Forming Same Public/Granted day:2016-06-23
Information query
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