发明授权
US09514857B2 Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same
有权
氧化锌前体和使用其的沉积氧化锌基薄膜的方法
- 专利标题： Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same
- 专利标题（中）： 氧化锌前体和使用其的沉积氧化锌基薄膜的方法
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申请号： US14049352申请日： 2013-10-09
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公开(公告)号： US09514857B2公开(公告)日： 2016-12-06
- 发明人: SooHo Park , JongSe Park , Young Zo Yoo , Joo Young Lee , Seo Hyun Kim , Gun Sang Yoon , Myong Woon Kim , Hyung Soo Shin , Seung Ho Yoo , Sang Do Lee , Sang Ick Lee , Sang Jun Yim
- 申请人： Samsung Corning Precision Materials Co., Ltd.
- 申请人地址： KR
- 专利权人： Corning Precision Materials Co., Ltd.
- 当前专利权人： Corning Precision Materials Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- 优先权： KR10-2012-0111674 20121009
- 主分类号： H01B1/08
- IPC分类号： H01B1/08 ; C03C17/245 ; C23C16/40 ; C23C16/448 ; H01L21/02 ; H01L31/18 ; H01L31/0224
摘要：
A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent.
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