Invention Grant
- Patent Title: Conductive contacts having varying widths and method of manufacturing same
- Patent Title (中): 具有不同宽度的导电触点及其制造方法
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Application No.: US14804617Application Date: 2015-07-21
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Publication No.: US09508668B2Publication Date: 2016-11-29
- Inventor: Yen-Liang Lin , Yu-Jen Tseng , Chang-Chia Huang , Tin-Hao Kuo , Chen-Shien Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/768 ; H01L21/48 ; H01L23/498

Abstract:
A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar has a pillar width, and the UBM width is greater than the pillar width.
Public/Granted literature
- US20150325542A1 CONDUCTIVE CONTACTS HAVING VARYING WIDTHS AND METHOD OF MANUFACTURING SAME Public/Granted day:2015-11-12
Information query
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