发明授权
- 专利标题： Method of manufacturing semiconductor device and structure including passivation film with a trench having sections of different depths and widths
- 专利标题（中）： 制造包括具有不同深度和宽度的部分的沟槽的钝化膜的半导体器件和结构的方法
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申请号： US14732997申请日： 2015-06-08
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公开(公告)号： US09508654B2公开(公告)日： 2016-11-29
- 发明人: Nobutaka Ukigaya , Masao Ishioka
- 申请人： CANON KABUSHIKI KAISHA
- 申请人地址： JP Tokyo
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2014-124683 20140617
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/48 ; H01L21/50 ; H01L21/00 ; H01L23/544 ; H01L31/18 ; H01L27/146
摘要：
A method of manufacturing a semiconductor device is provided. The method includes forming a passivation film on a substrate including a plurality of element regions and a scribe region, forming a trench in the passivation film in a region of the scribe region along an outer edge of each of the element regions, and forming a film on the passivation film in which the trench has been formed by coating. A depth of a first section in a first position of the trench is shallower than a depth of a second section in a second position of the trench. A width of the first section is wider than a width of the second section.
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