发明授权
US09461244B2 Memory device, semiconductor device, method for producing memory device, and method for producing semiconductor device
有权
存储装置，半导体装置，存储装置的制造方法以及半导体装置的制造方法
- 专利标题： Memory device, semiconductor device, method for producing memory device, and method for producing semiconductor device
- 专利标题（中）： 存储装置，半导体装置，存储装置的制造方法以及半导体装置的制造方法
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申请号： US15019513申请日： 2016-02-09
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公开(公告)号： US09461244B2公开(公告)日： 2016-10-04
- 发明人: Fujio Masuoka , Hiroki Nakamura
- 申请人： Unisantis Electronics Singapore Pte. Ltd.
- 申请人地址： SG Peninsula Plaza
- 专利权人： UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
- 当前专利权人： UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
- 当前专利权人地址： SG Peninsula Plaza
- 代理机构： Brinks Gilson & Lione
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/336 ; H01L31/113 ; H01L29/06 ; H01L45/00 ; H01L27/24
摘要：
A method for producing a semiconductor device includes forming a fin-shaped semiconductor layer on a semiconductor substrate and a first pillar-shaped semiconductor layer, a second pillar-shaped semiconductor layer, and a contact line, the contact line extending in a direction perpendicular to a direction in which the fin-shaped semiconductor layer extends. A pillar-shaped phase-change layer and a lower electrode are formed overlying the first pillar-shaped semiconductor layer. A reset gate insulating film is formed so as to surround the pillar-shaped phase-change layer and the lower electrode and a reset gate is formed.
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