发明授权
- 专利标题： Method for setting a flash memory for HTOL testing
- 专利标题（中）： HTOL测试闪存设置方法
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申请号： US14566060申请日： 2014-12-10
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公开(公告)号： US09449718B2公开(公告)日： 2016-09-20
- 发明人: Yipeng Chan , Kijun Kim , Guoxu Zhao , Xiao Ye , Zhen Yang
- 申请人： Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
- 申请人地址： CN CN
- 专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- 当前专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- 当前专利权人地址： CN CN
- 代理机构： Innovation Counsel LLP
- 优先权： CN201410195902 20140509
- 主分类号： G11C29/50
- IPC分类号： G11C29/50 ; G11C16/30 ; G11C29/06 ; G11C29/44 ; G11C16/00
摘要：
A method for setting voltages in a flash memory for high temperature operating life (HTOL) testing is provided. The flash memory includes a substrate, a source, and a control gate. The method includes adjusting the voltages that are applied to the source, the control gate, and the substrate, such that there is no voltage difference between the control gate and the source, and no voltage difference between the control gate and the substrate. Specifically, adjusting the voltages includes setting the voltage that is applied to the source to a ground voltage, setting the voltage that is applied to the control gate to the ground voltage, and setting the voltage that is applied to the substrate to a power supply voltage.
公开/授权文献
- US20150325307A1 METHOD FOR SETTING A FLASH MEMORY FOR HTOL TESTING 公开/授权日：2015-11-12
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