Invention Grant
- Patent Title: Low temperature high strength metal stack for die attachment
- Patent Title (中): 用于模具附件的低温高强度金属叠层
-
Application No.: US13361569Application Date: 2012-01-30
-
Publication No.: US09443903B2Publication Date: 2016-09-13
- Inventor: Michael John Bergmann , Christopher D. Williams , Kevin Shawne Schneider , Kevin Haberern , Matthew Donofrio
- Applicant: Michael John Bergmann , Christopher D. Williams , Kevin Shawne Schneider , Kevin Haberern , Matthew Donofrio
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel & Sibley, P.A.
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L27/15 ; H01L23/00 ; H01L25/075 ; H01L33/40
Abstract:
A light emitting diode structure includes a diode region and a metal stack on the diode region. The metal stack includes a barrier layer on the diode region and a bonding layer on the barrier layer. The barrier layer is between the bonding layer and the diode region. The bonding layer includes gold, tin and nickel. A weight percentage of tin in the bonding layer is greater than 20 percent and a weight percentage of gold in the bonding layer is less than about 75 percent. A weight percentage of nickel in the bonding layer may be greater than 10 percent.
Public/Granted literature
- US20120211793A1 Low Temperature High Strength Metal Stack for Die Attachment Public/Granted day:2012-08-23
Information query
IPC分类:
