发明授权
- 专利标题: Multichip power semiconductor device
- 专利标题(中): 多芯片功率半导体器件
-
申请号: US14543557申请日: 2014-11-17
-
公开(公告)号: US09443760B2公开(公告)日: 2016-09-13
- 发明人: Joachim Mahler , Thomas Bemmerl , Anton Prueckl
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: INFINEON TECHNOLOGIES AG
- 当前专利权人: INFINEON TECHNOLOGIES AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/768 ; H01L23/13 ; H01L23/433 ; H01L23/495 ; H01L23/00 ; H01L23/498 ; H01L25/07 ; H01L25/00 ; H01L23/31
摘要:
An electronic device includes a first chip carrier and a second chip carrier isolated from the first chip carrier. A first power semiconductor chip is mounted on and electrically connected to the first chip carrier. A second power semiconductor chip is mounted on and electrically connected to the second chip carrier. An electrically insulating material is configured to at least partially surround the first power semiconductor chip and the second power semiconductor chip. An electrical interconnect is configured to electrically connect the first power semiconductor chip to the second power semiconductor chip, wherein the electrical interconnect has at least one of a contact clip and a galvanically deposited conductor.
公开/授权文献
- US20150064844A1 Multichip Power Semiconductor Device 公开/授权日:2015-03-05
信息查询
IPC分类: