Invention Grant
- Patent Title: Semiconductor device including landing pad
- Patent Title (中): 半导体装置包括着陆垫
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Application No.: US14606245Application Date: 2015-01-27
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Publication No.: US09437560B2Publication Date: 2016-09-06
- Inventor: Je-min Park , Yoo-sang Hwang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2014-0010886 20140128
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/00 ; H01L27/108

Abstract:
A semiconductor device includes conductive lines spaced from a substrate, and an insulating spacer structure between the conductive lines and defining a contact hole. The insulating spacer structure is adjacent a side wall of at least one of the conductive lines. The device also includes an insulating pattern on the conductive lines and insulating spacer structure, and another insulating pattern defining a landing pad hole connected to the contact hole. A contact plug is formed in the contact hole and connects to the active area. A landing pad is formed in the landing pad hole and connects to the contact plug. The landing pad vertically overlaps one of the pair of conductive line structures.
Public/Granted literature
- US20150214291A1 SEMICONDUCTOR DEVICE INCLUDING LANDING PAD Public/Granted day:2015-07-30
Information query
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