发明授权
US09412806B2 Making multilayer 3D capacitors using arrays of upstanding rods or ridges
有权
使用直立杆或脊的阵列制作多层3D电容器
- 专利标题: Making multilayer 3D capacitors using arrays of upstanding rods or ridges
- 专利标题(中): 使用直立杆或脊的阵列制作多层3D电容器
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申请号: US14304535申请日: 2014-06-13
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公开(公告)号: US09412806B2公开(公告)日: 2016-08-09
- 发明人: Liang Wang , Rajesh Katkar , Hong Shen , Cyprian Emeka Uzoh
- 申请人: Invensas Corporation
- 申请人地址: US CA San Jose
- 专利权人: Invensas Corporation
- 当前专利权人: Invensas Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L27/01
- IPC分类号: H01L27/01 ; H01L49/02
摘要:
In one embodiment, a method for making a 3D Metal-Insulator-Metal (MIM) capacitor includes providing a substrate having a surface, forming an array of upstanding rods or ridges on the surface, depositing a first layer of an electroconductor on the surface and the array of rods or ridges, coating the first electroconductive layer with a layer of a dielectric, and depositing a second layer of an electroconductor on the dielectric layer. In some embodiments, the array of rods or ridges can be made of a photoresist material, and in others, can comprise bonded wires.
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