A memory device includes a bit line extending in a first direction, a word line extending in a second direction crossing the first direction, an insulating material between the word line and another word line, a first layer made of a Group IV element, between the word line and the insulating material and between the word line and the bit line, and a second layer made of a compound of a Group V element and a Group VI element, between the insulating material and the bit line. The word line includes a first portion that is metallic and a second portion between the first portion and the first layer. In addition, a variable resistance portion in contact with the first and second layers and the second portion of the word line, contains the Group IV element and the compound of the Group V element and the Group VI element.