发明授权
- 专利标题: Method to define multiple layer patterns with a single exposure by charged particle beam lithography
- 专利标题(中): 通过带电粒子束光刻法单次曝光来定义多层图案的方法
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申请号: US14747054申请日: 2015-06-23
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公开(公告)号: US09405195B2公开(公告)日: 2016-08-02
- 发明人: Yen-Cheng Lu , Chih-Tsung Shih , Jeng-Horng Chen , Shinn-Sheng Yu , Anthony Yen
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G03F7/095 ; G03F7/36 ; G03F1/78 ; H01L21/027 ; H01L21/311 ; H01L21/768 ; H01L21/033
摘要:
The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer and a second latent feature in the second patternable material layer.
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