发明授权
US09395739B2 Common well bias design for a driving circuit and method of using same
有权
驱动电路的通用阱偏置设计及其使用方法
- 专利标题: Common well bias design for a driving circuit and method of using same
- 专利标题(中): 驱动电路的通用阱偏置设计及其使用方法
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申请号: US14566061申请日: 2014-12-10
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公开(公告)号: US09395739B2公开(公告)日: 2016-07-19
- 发明人: Chia-Hui Chen , Yu-Ren Chen
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW
- 代理机构: Hauptman Ham, LLP
- 主分类号: H03B1/00
- IPC分类号: H03B1/00 ; H03K3/00 ; G05F3/16 ; H03K17/687 ; H03K19/0175
摘要:
A driving circuit includes a common well. The driving circuit further includes a first output buffer having a bulk connected to the common well, the first output buffer having a first terminal configured to receive a first signal, and having a second terminal connected to the common well. The driving circuit further includes a second output buffer having a bulk connected to the common well, the second output buffer having a first terminal configured to receive the first signal, wherein a second terminal of the second output buffer is disconnected from the common well.
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