发明授权
- 专利标题: Junction material, manufacturing method thereof, and manufacturing method of junction structure
- 专利标题(中): 接合材料及其制造方法以及接合结构的制造方法
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申请号: US13700294申请日: 2011-07-28
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公开(公告)号: US09393645B2公开(公告)日: 2016-07-19
- 发明人: Takuto Yamaguchi , Masahide Okamoto , Osamu Ikeda , Hiromitsu Kuroda , Kazuma Kuroki , Shohei Hata , Yuichi Oda
- 申请人: Takuto Yamaguchi , Masahide Okamoto , Osamu Ikeda , Hiromitsu Kuroda , Kazuma Kuroki , Shohei Hata , Yuichi Oda
- 申请人地址: JP Tokyo
- 专利权人: Hitachi Metals, Ltd.
- 当前专利权人: Hitachi Metals, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Foley & Lardner LLP
- 优先权: JP2010-193885 20100831; JP2011-097178 20110425
- 国际申请: PCT/JP2011/067335 WO 20110728
- 国际公布: WO2012/029470 WO 20120308
- 主分类号: B21B3/00
- IPC分类号: B21B3/00 ; B23K35/00 ; B23K35/02 ; B23K1/00 ; B23K35/28 ; B23K35/30 ; B23K35/38 ; B32B15/01 ; C22C5/02 ; C22C9/00 ; C22F1/00 ; C22F1/04 ; C22F1/08 ; C22F1/16 ; H01L21/50 ; H01L23/06 ; H01L23/10 ; H01L23/373 ; H01L23/495 ; H01L23/00 ; H01L23/31
摘要:
The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer (101), Al-based metallic layers (102a, 102b) on both sides thereof, and X-based metallic layers (103a, 103b) (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers (102a, 102b), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction.
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