A semiconductor device includes a transistor formed on a semiconductor substrate, a first insulation film formed above the semiconductor substrate, and first and second capacitors located on the first insulation film. The first capacitor includes a lower electrode, a ferroelectric, and an upper electrode. One of the lower electrode and the upper electrode is connected to an impurity region of the transistor. The second capacitor includes a first electrode, a first dielectric, a second electrode, a second dielectric, and a third electrode. The lower electrode is formed from the same material as the first electrode, the ferroelectric is formed from the same material as the first dielectric, and the upper electrode is formed from the same material as the second electrode.