Provided herein is a photoresist compound with improved extreme-ultraviolet lithography image performance. The photoresist includes a polymer that is free of an aromatic group and a photo acid generator (PAG) free of aromatic groups. The PAG includes an anion component and a cation component, wherein the anion component has one of the several specified chemical formulas and the cation component also has a specified chemical formula. The anion component includes a material selected from the group consisting of methyl and ethyl and the cation component includes a material selected from the group consisting of: an alkyl group, an alkenyl group, and an oxoalkyl group.