Invention Grant
US09386680B2 Detecting plasma arcs by monitoring RF reflected power in a plasma processing chamber
有权
通过监测等离子体处理室中的RF反射功率来检测等离子弧
- Patent Title: Detecting plasma arcs by monitoring RF reflected power in a plasma processing chamber
- Patent Title (中): 通过监测等离子体处理室中的RF反射功率来检测等离子弧
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Application No.: US14496093Application Date: 2014-09-25
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Publication No.: US09386680B2Publication Date: 2016-07-05
- Inventor: Jian J. Chen , Shilpa Sudhakaran , Mohamad A. Ayoub
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H05H1/46
Abstract:
Embodiments of the present disclosure generally relate to methods for detecting unstable plasma in a substrate processing chamber. In one embodiment, the method includes providing a forward power from a power source to the substrate processing chamber through a detection device, splitting the forward power passing through the detection device at a predetermined ratio to obtain a first value of the power to the substrate processing chamber, measuring a reflected power from the substrate processing chamber to obtain a second value of the power from the substrate processing chamber, and directing the power source to turn off the forward power if the second value of the power is different than the first value of the power.
Public/Granted literature
- US20160095196A1 DETECTING PLASMA ARCS BY MONITORING RF REFLECTED POWER IN A PLASMA PROCESSING CHAMBER Public/Granted day:2016-03-31
Information query
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