- 专利标题： Structure of thermoelectric film
-
申请号： US14855403申请日： 2015-09-16
-
公开(公告)号： US09385291B2公开(公告)日： 2016-07-05
- 发明人: Ming-Sheng Leu , Tai-Sheng Chen , Chih-Chao Shih
- 申请人： Industrial Technology Research Institute
- 申请人地址： TW Hsinchu
- 专利权人： Industrial Technology Research Institute
- 当前专利权人： Industrial Technology Research Institute
- 当前专利权人地址： TW Hsinchu
- 代理机构： Jianq Chyun IP Office
- 优先权： TW101147271A 20121213
- 主分类号： H01L35/10
- IPC分类号： H01L35/10 ; H01L35/18 ; H01L35/16 ; H01L35/22 ; H01L35/14
摘要：
A structure of a thermoelectric film including a thermoelectric substrate and a pair of first diamond-like carbon (DLC) layers is provided. The first DLC layers are respectively located on two opposite surfaces of the thermoelectric substrate and have electrical conductivity.
公开/授权文献
- US20160005943A1 STRUCTURE OF THERMOELECTRIC FILM 公开/授权日：2016-01-07
信息查询
IPC分类:
