发明授权
- 专利标题： Nitride semiconductor light-emitting diode
- 专利标题（中）： 氮化物半导体发光二极管
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申请号： US14830713申请日： 2015-08-19
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公开(公告)号： US09385275B2公开(公告)日： 2016-07-05
- 发明人: Atsushi Yamada , Akira Inoue
- 申请人： Panasonic Intellectual Property Management Co., Ltd.
- 申请人地址： JP Osaka
- 专利权人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- 当前专利权人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2014-079114 20140408
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L33/24 ; H01L33/20 ; H01L33/38 ; H01L33/16 ; H01L33/32
摘要：
In a nitride semiconductor light-emitting diode having a shape of an isosceles triangle in a top view, either Group Aa consisting of the following two mathematical formulae (Ia) and (IIa) or Group Ab consisting of the following two mathematical formulae (Ib) and (IIb) is satisfied: 20 degrees≦Angle degree α≦40 degrees (Ia) and 0 degrees≦Angle degree θ≦40 degrees (IIa) Group Aa: 90 degrees≦Angle degree α≦130 degrees (Ib) and 50 degrees≦Angle degree θ≦90 degrees (IIb). Group Ab:
公开/授权文献
- US20150357522A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE 公开/授权日：2015-12-10
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