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US09385264B2 II-VI based light emitting semiconductor device 有权
II-VI型发光半导体器件

II-VI based light emitting semiconductor device
摘要:
The invention provides a light emitting semi conductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn-xMgxO with 1-350 ppm Al, wherein x is in the range of 0
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