发明授权
- 专利标题： Semiconductor integrated circuit device having reservoir capacitor and method of manufacturing the same
- 专利标题（中）： 具有储存电容器的半导体集成电路装置及其制造方法
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申请号： US14477574申请日： 2014-09-04
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公开(公告)号： US09385161B2公开(公告)日： 2016-07-05
- 发明人: Hae Chan Park
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2014-0069238 20140609
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; H01L29/40 ; H01L49/02 ; H01L29/66 ; H01L27/08 ; H01L29/94
摘要：
A semiconductor integrated circuit device having a reservoir capacitor and a method of manufacturing the same are provided. A first insulating layer is formed on a semiconductor substrate including a first region and a second region. A first conductive layer is formed on the first insulating layer, and a second insulating layer is formed on the first conductive layer. The second insulating layer is patterned to be left in a portion of the first region. A second conductive layer is formed on the second insulating layer and the first conductive layer. The second conductive layer is etched to expose a partial surface of the first conductive layer in the first region. The second conductive layer and the first conductive layer are etched to form a reservoir capacitor in the first region and form a gate in the second region.
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