- 专利标题: Semiconductor integrated circuit device
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申请号: US14945378申请日: 2015-11-18
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公开(公告)号: US09385113B2公开(公告)日: 2016-07-05
- 发明人: Shiro Usami
- 申请人: SOCIONEXT INC.
- 申请人地址: JP Kanagawa
- 专利权人: SOCIONEXT INC.
- 当前专利权人: SOCIONEXT INC.
- 当前专利权人地址: JP Kanagawa
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2011-202824 20110916
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L27/02 ; H01L29/861
摘要:
Diffusion regions having the same conductivity type are arranged on a side of a second wiring and a side of a third wiring, respectively under a first wiring connected to a signal terminal. Diffusion regions are separated in a whole part or one part of a range in a Y direction. That is, under first wiring, diffusion regions are only formed in parts opposed to diffusion regions formed under the second wiring and third wiring connected to a power supply terminal or a ground terminal, and a diffusion region is not formed in a central part in an X direction. Therefore, terminal capacity of the signal terminal can be reduced without causing ESD resistance to be reduced, in an ESD protection circuit with the signal terminal.
公开/授权文献
- US20160079224A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 公开/授权日:2016-03-17
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