发明授权
- 专利标题: Semiconductor devices
- 专利标题(中): 半导体器件
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申请号: US14370971申请日: 2013-01-10
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公开(公告)号: US09385105B2公开(公告)日: 2016-07-05
- 发明人: Thorsten Meyer , Gerald Ofner , Bernd Waidhas , Hans-Joachim Barth , Sven Albers , Reinhard Golly , Philipp Riess , Bernd Ebersberger
- 申请人: INTEL DEUTSCHLAND GMBH
- 申请人地址: DE Neubiberg
- 专利权人: Intel Deutschland GmbH
- 当前专利权人: Intel Deutschland GmbH
- 当前专利权人地址: DE Neubiberg
- 国际申请: PCT/EP2013/050398 WO 20130110
- 国际公布: WO2013/104712 WO 20130718
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/00 ; H01L25/065 ; H01L25/16 ; H01L23/538 ; H01L23/498 ; H01L23/31 ; H01L21/56
摘要:
A semiconductor device includes: a chip having at least one electrically conductive contact at a first side of the chip; an extension layer extending laterally from one or more sides of the chip; a redistribution layer on a surface of the extension layer and the first side, and coupled to the contact; an interposer having at least one electrically conductive contact at a first surface of the interposer and coupled to the redistribution layer, and at least one electrically conductive contact at a second surface of the interposer opposite to the first surface; a molding material at least partially enclosing the chip and the redistribution layer, and in contact with the interposer. Another semiconductor device includes: an interposer; a redistribution layer over the interposer; a circuit having first and second circuit portions, wherein the redistribution layer includes the first circuit portion, and the interposer includes the second circuit portion.
公开/授权文献
- US20150028478A1 SEMICONDUCTOR DEVICES 公开/授权日:2015-01-29
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