- 专利标题： Tungsten salicide gate source for vertical NAND string to control on current and cell pillar fabrication
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申请号： US14635482申请日： 2015-03-02
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公开(公告)号： US09384995B2公开(公告)日： 2016-07-05
- 发明人: Fatma Arzum Simsek-Ege , Krishna K Parat
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Alpine Technology Law Group LLC
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/308 ; H01L29/423 ; H01L29/66 ; H01L29/788 ; H01L27/115 ; H01L29/49
摘要：
A non-volatile memory device and a method for forming the non-volatile memory device are disclosed. During fabrication of the memory device, a tungsten salicide is utilized as an etch-stop layer in place of a conventionally used aluminum oxide to form channel pillars having a high aspect ratio. Use of the tungsten salicide is useful for eliminating an undesired etch-stop recess and an undesired floating gate that is formed when an Al oxide etch-stop layer is conventionally used.
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