发明授权
- 专利标题： Method of forming trenches
- 专利标题（中）： 形成沟槽的方法
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申请号： US14636200申请日： 2015-03-03
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公开(公告)号： US09384978B1公开(公告)日： 2016-07-05
- 发明人: Chao-Hung Lin , Shih-Fang Hong , Li-Wei Feng , Shih-Hung Tsai , Ssu-I Fu , Jyh-Shyang Jenq
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 优先权： TW104101229A 20150114
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/033 ; H01L21/311
摘要：
The present invention provides a method for forming trenches. First, a mandrel layer is formed on a substrate, wherein the mandrel layer comprises a stop layer and a sacrificial layer. A spacer is formed on at least a sidewall of the mandrel layer, following by forming a material layer on the substrate for covering the spacer and the mandrel layer. After performing a removing process to remove apart of the material layer, apart of the spacer and the sacrificial layer; the spacer is removed to form at least one first trench in the remaining material layer and the mandrel.
公开/授权文献
- US20160203982A1 METHOD OF FORMING TRENCHES 公开/授权日：2016-07-14
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