A semiconductor device which includes a normal cell, a replica cell, a word line, a first bit line, a bias generation circuit, a second bit line, and a current generation circuit. The normal cell is a one-time programmable (OTP) type memory cell. The replica cell has characteristics equivalent to those of the normal cell. The word line is electrically connected in common to a control terminal of the normal cell and a control terminal of the replica cell. The first bit line is electrically connected to an input-output terminal of the replica cell. The bias generation circuit is electrically connected to the first bit line. The second bit line is electrically connected to an input-output terminal of the normal cell. The current generation circuit is electrically connected to the second bit line. The bias generation circuit and the current generation circuit are controlled through a common control line.