An integrated circuit device having improved radiation immunity is described. The integrated circuit device comprises an n-type wafer having a first surface and a second surface; a p-type epitaxial layer formed on the first surface of the n-type wafer, the p-type epitaxial wafer having first elements storing charge; and an n-well formed in the p-type epitaxial layer, the n-well having second elements storing charge; wherein the n-type wafer is positively biased to attract excess minority carriers in the p-type epitaxial layer. A method of improving radiation immunity in an integrated circuit is also described.