Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14587291Application Date: 2014-12-31
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Publication No.: US09362220B2Publication Date: 2016-06-07
- Inventor: Sang-Jong Kim , Jae-Hyeon Park , Sung-Hoon Bae , Jong-Wan Ma
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0113352 20101115
- Main IPC: H01L23/60
- IPC: H01L23/60 ; H01L23/50 ; H01L27/02 ; H01L21/8234 ; H01L23/00

Abstract:
A semiconductor device, including a substrate having an active region defined therein, a plurality of bit lines extending on the substrate in a first direction, a plurality of interconnection lines extending on the substrate in a second direction, a pad electrically connected to the plurality of interconnection lines and configured to apply an external voltage, a plurality of metal contacts electrically connecting the interconnection lines and the plurality of bit lines, and a plurality of bit line contacts that are in contact with the active region and electrically connect the plurality of bit lines and the active region, wherein a size of at least some of the bit line contacts and/or at least some of the metal contacts vary based on a distance of the respective bit line contact or the metal contact from the pad.
Public/Granted literature
- US20150115457A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-04-30
Information query
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