Invention Grant
- Patent Title: Vertical type memory device
- Patent Title (中): 垂直式存储装置
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Application No.: US14975703Application Date: 2015-12-18
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Publication No.: US09356044B2Publication Date: 2016-05-31
- Inventor: Kwang-Soo Seol , Seong-Soon Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2012-0110751 20121005
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; H01L27/115 ; H01L23/522 ; H01L23/528

Abstract:
A semiconductor device, comprising: a plurality of memory cell strings; a bitline; and an interconnection coupling at least two of the memory cell strings to the bitline. Memory cell strings can be coupled to corresponding bitlines through corresponding interconnections. Alternate memory cell strings can be coupled to different bitlines through corresponding different interconnections.
Public/Granted literature
- US20160104721A1 VERTICAL TYPE MEMORY DEVICE Public/Granted day:2016-04-14
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