Invention Grant
US09356044B2 Vertical type memory device 有权
垂直式存储装置

Vertical type memory device
Abstract:
A semiconductor device, comprising: a plurality of memory cell strings; a bitline; and an interconnection coupling at least two of the memory cell strings to the bitline. Memory cell strings can be coupled to corresponding bitlines through corresponding interconnections. Alternate memory cell strings can be coupled to different bitlines through corresponding different interconnections.
Public/Granted literature
Information query
Patent Agency Ranking
0/0