Method of fabricating a semiconductor structure having conductive bumps with a plurality of metal layers

Invention Grant

US09349705B2 Method of fabricating a semiconductor structure having conductive bumps with a plurality of metal layers 有权

Title translation: 制造具有多个金属层的导电凸块的半导体结构的方法

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Patent Title: Method of fabricating a semiconductor structure having conductive bumps with a plurality of metal layers
Patent Title (中): 制造具有多个金属层的导电凸块的半导体结构的方法
Application No.: US14616078

Application Date: 2015-02-06
Publication No.: US09349705B2

Publication Date: 2016-05-24
Inventor: Chien-Feng Chan , Mu-Hsuan Chan , Chun-Tang Lin , Yi-Che Lai
Applicant: Siliconware Precision Industries Co., Ltd.
Applicant Address: TW Taichung
Assignee: Siliconware Precision Industries Co., Ltd.
Current Assignee: Siliconware Precision Industries Co., Ltd.
Current Assignee Address: TW Taichung
Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
Agent Peter F. Corless; Steven M. Jensen
Priority: TW101124582A 20120709
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L23/00 ; H01L23/488 ; H01L21/441 ; H01L21/56 ; H01L23/14

Method of fabricating a semiconductor structure having conductive bumps with a plurality of metal layers

Abstract:

A conductive bump structure used to be formed on a substrate having a plurality of bonding pads. The conductive bump structure includes a first metal layer formed on the bonding pads, a second metal layer formed on the first metal layer, and a third metal layer formed on the second metal layer. The second metal layer has a second melting point higher than a third melting point of the third metal layer. Therefore, a thermal compression bonding process is allowed to be performed to the third metal layer first so as to bond the substrate to another substrate, and then a reflow process can be performed to melt the second metal layer and the third metal layer into each other so as to form an alloy portion, thus avoiding cracking of the substrate.

Abstract(Chinese):

用于形成在具有多个接合焊盘的基板上的导电凸块结构。导电凸块结构包括在接合焊盘上形成的第一金属层，形成在第一金属层上的第二金属层和形成在第二金属层上的第三金属层。第二金属层的第二熔点高于第三金属层的第三熔点。因此，首先对第三金属层进行热压接，从而将基板粘合到另一基板上，然后进行回流处理，使第二金属层和第三金属层彼此熔融从而形成合金部分，从而避免基板的开裂。

Public/Granted literature

US20150155258A1 METHOD OF FABRICATING A SEMICONDUCTOR STRUCTURE HAVING CONDUCTIVE BUMPS WITH A PLURALITY OF METAL LAYERS Public/Granted day:2015-06-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）