发明授权
US09349340B2 Thin-film transistor substrate, display device provided with same, and method for producing thin-film transistor substrate
有权
薄膜晶体管基板，具备该薄膜晶体管基板的显示装置及薄膜晶体管基板的制造方法
- 专利标题： Thin-film transistor substrate, display device provided with same, and method for producing thin-film transistor substrate
- 专利标题（中）： 薄膜晶体管基板，具备该薄膜晶体管基板的显示装置及薄膜晶体管基板的制造方法
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申请号： US13882938申请日： 2011-11-08
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公开(公告)号： US09349340B2公开(公告)日： 2016-05-24
- 发明人: Masaki Saitoh , Naoki Makita
- 申请人： Masaki Saitoh , Naoki Makita
- 申请人地址： JP Osaka
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： JP Osaka
- 代理机构： Chen Yoshimura LLP
- 优先权： JP2010-255263 20101115
- 国际申请： PCT/JP2011/006226 WO 20111108
- 国际公布： WO2012/066745 WO 20120524
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; G09G3/36 ; H03K17/06
摘要：
In at least one operation control TFT (27N, 27P) in a control circuit (27), an impurity of a type that generates an impurity level of a channel region (33c) is included in the channel region (33c) as a threshold adjustment impurity, and the concentration of the threshold adjustment impurity is made higher than the concentration of the threshold adjustment impurity in channel regions (33c) of other TFTs (21, 25, 28) of the same type, thus causing the absolute value of the threshold voltage to be greater than that of the other TFTs (21, 25, 28) of the same type.
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