Methods and apparatuses for a magnetic tunnel junction (MTJ) which can be used in as a magnetic random access memory cell are disclosed. The MTJ comprises a free layer and an insulator layer. The MTJ further comprises a pinned layer with a first region, a second region, and a third region. The second region is of a first length and of a first thickness, and the first region and the third region are of a second length and of a second thickness. A ratio of the first thickness to the second thickness may be larger than 1.2. A ratio of the second length to the first length is larger than 0.5. The first thickness may be larger than a spin diffusion length of a material for the pinned layer. So formed MTJ results in increased tunneling magnetic resistance ratio and reduced critical switch current of the MTJ.